South Korean giant SK hynix has confirmed the end of your HBM3 memory development, quite an achievement since this makes it the first company that has been able to successfully complete this first stage, and this should, in theory, allow its entry into the mass production phase to take place in the short term. In this sense, it is important to remember that the South Korean was also the first to start mass production of the HBM2E memory, something that took place in July last year.
The new HBM3 memory is, as its acronym indicates, a new type of high-bandwidth memory that maintains the keys of previous generations, which means that stacks in 3D, and that it can reach very high transfer speeds, although this depends on the total number of chips that we have stacked.
According to SK hynix, HBM3 memory is not only the fastest DRAM in the world, but also the one with the most capacity. To all of the above, it would be necessary to add a more polished design, at the silicon level, that would translate into “higher quality”, as the company has directly implied. If we look at its raw values, the truth is that it impresses, since we have a speed of up to 819 GB per second, a figure that represents a 78% improvement over the HBM2E standard.
Interesting, but SK hynix is aware that uncontrolled power is useless, and has therefore confirmed that this new type of memory also has bug correction technology. This makes it viable in any professional field, including scientific research, where complicated simulations are used that must maintain total precision, and therefore cannot be affected by the slightest error.
According to SK hynix, it will offer the HBM3 memory in two different configurations, one of 24 GB, which will become the largest in the industry, and another 16 GB. As in previous generations, this standard connects vertically using the TSV technology (“Through Silicon Via”), which joins the chips of different levels by means of an electrode that passes through thousands of very fine holes present in these chips.
The HBM3 memory is aimed at high performance data centers, to automated deep learning platforms, which will allow the creation of more advanced artificial intelligence systems, and also to the supercomputing sector focused on research in a broad sense, as indicated above. Seon-yong Cha, executive vice president in charge of DRAM development, commented:
“Since the launch of the world’s first HBM DRAM, SK hynix has succeeded in developing the industry’s first HBM3 after leading the HBM2E market. We will continue our efforts to solidify our leadership in the premium memory market and help drive our customers’ values by providing products that are in line with ESG management standards.