The firm SK hynix has confirmed that it continues to work on the HBM3E memoryand that it will enter the mass production phase in 2024. The node that the South Korean company will use to carry out this production will be the 1bnmwhich will also apply to its future DDR5 memory chips.
In general terms, we can define HBM3E memory as a faster version of the HBM3 standard. According to SK hynix, this new version will run at a maximum speed of 8GHz, which is a 25% increase over HBM3 memory, and an 800% improvement over first generation HBM memory which, as some of you may remember of our readers, it was running at 1 GHz.
This working frequency may seem very low if we compare it with the more than 20 GHz that GDDR6X memory can reach, but we must bear in mind that HBM3E memory uses much wider buses, and that in the end this allows it to offer a bandwidth of huge band. For comparative purposes, the 256-bit and 384-bit buses are the most used with the fastest GDDR6X memory, while HBM3E memory can use without problems 4,096-bit buses.
This type of memory is intended for professional environments, and We assume that thanks to the jump to that new node it will also be more efficientalthough we still do not have official information from SK Hynix in this regard.
Regarding the new DDR5 memory manufactured in the 1bnm node, SK hynix has said that will consume 20% less energy than its equivalent under the 1anm node. This will be possible thanks to the introduction in this new manufacturing process of a material with a high dielectric constant that prevents electrical leakage, and at the same time improves the capacity to store electrical charges.
According to the South Korean company, the jump to this new manufacturing node will allow you to improve your income, and is convinced that the recovery of the memory sector will take place from the second half of this year. However, and seeing the saturation of the same, it is very likely that this recovery will be slow.
